4 inch 4H-N As-cut SiC wafer manufacturer Unpolished SiC Substrate

4 inch 4H-N As-cut SiC wafer manufacturer Unpolished SiC Substrate

Do you want to test your grinding and polishing equipments? Purchase As-Cut SiC Substrate Wafer from HMT SiC Wafer Manufacturer and Supplier in China. We manufacture unpolished 4 inch and 6 inch As-cut SiC wafer with lowest MPD with favourable price on the market. Contact us now and get quotaiton immediately！

SiC wide energy Gap (Band Gap) than the existing Si (silicon) Gap width more than 3 times wider, can withstand more than 10 times the voltage, SiC low loss, high power characteristics suitable for high voltage and high current application field, including electric vehicles, electric vehicle charging infrastructure, solar energy and offshore wind power and other green power generation equipment.ompared with traditional Si, the third-generation semiconductor material SiC can reduce the power conversion loss by 50%, reduce the power conversion cost by 20%, and improve the endurance of electric vehicles by 4%.